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Semiconductor-Substrate Integrated 3D-Micromachined W-Band Helical Antennas

机译:半导体-基板集成3D微加工W波段螺旋形天线

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摘要

This paper investigates for the first time concepts of W-band dielectric-core helix antennas which are fabricated by three-dimensional micromachining into the volume of a semiconductor (high-resistivity silicon) wafer substrate. The maximum antenna gain is achieved by free-etching the antenna but loading the core of the helical antenna with a dielectric-rod tailor-made out of the substrate, and by properly modifying the geometry of the substrate-integrated ground plane. The simulation results show that an optimized antenna concept has a return loss S11 of -22.3 dB at the nominal frequency of 75 GHz, and a 3dB-bandwidth of 2.5 GHz. For the whole band from 69 to84 GHz, the reflection coefficient is better than -10 dB. A maximum gain of 13.2 dB and a half-power beamwidth (HPBW) of smaller than 40° are obtained for a single antenna. The front to-back (F/B) ratio is better than 23.5 dB with an axial ratio of 0.94. An eight-element helix line array is demonstrated and has a maximum gain of 22.3 dB with a HPBW of 7° in the y-z plane and an F/B ratio of 23.71 dB.
机译:本文首次研究了W波段电介质芯螺旋天线的概念,该天线是通过三维微机械加工到半导体(高电阻率硅)晶片基板的体积中制成的。最大的天线增益是通过自由蚀刻天线,但在螺旋天线的纤芯上装上由基板特制的介电棒并适当修改基板集成接地平面的几何形状来实现的。仿真结果表明,优化的天线概念在75 GHz的标称频率下的回波损耗S11为-22.3 dB,而3dB的带宽为2.5 GHz。对于69至84 GHz的整个频带,反射系数均优于-10 dB。对于单个天线,最大增益为13.2 dB,半功率波束宽度(HPBW)小于40°。前后比(F / B)优于23.5 dB,轴向比为0.94。演示了八元素螺旋线阵列,其最大增益为22.3 dB,y-z平面中的HPBW为7°,F / B比为23.71 dB。

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